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Schwerpunktprogramm SPP 1285
Halbleiter Spintronik
Spintronik > Projekte > Projektansicht

Projekt

Ansprechpartner1
Prof. Dr. Gerhard Abstreiter
Adresse1

Technische Universität München
Walter Schottky Institut
Am Coulombwall 3
D-85748 Garching

Tel.:
Tel.:089 289 12770
Fax:
Fax:089 320 66 20
email:
Ansprechpartner2
Dr. Dominique Bougeard
Adresse2

Technische Universität München
Walter Schottky Institut
Am Coulombwall 3
D-85748 Garching

Tel.:
Tel.:089 289 12777
Fax:
Fax:089 320 66 20
email:
Projekttitel
Silicon and germanium based magnetic semiconductors
Projektbeschreibung

The main objective of this project is to develop silicon and germanium based magnetic semiconductor materials which can be seamlessly integrated into the mature and widespread silicon based technology. Magnetic manganese atoms can be introduced into silicon-germanium hetero- and nano-structures in molecular beam epitaxy with atomic layer control. This opens a large horizon to combine the use of carrier spin with the possibility to rely on well studied and existing heterostructure concepts in silicon materials to develop spintronics devices. In a first focus our project concentrates on the development of diluted magnetic semiconductors where an optimised dispersion of manganese atoms in a silicon-germanium matrix should lead to the appearance of ferromagnetism in the film while conserving the electrical properties of a semiconductor. Such films could be used as very efficient spin-injectors in silicon-germanium heterostructures. In a second focus we will explore the possibilities to use intermetallic phases of silicon, germanium and manganese in the form of selectively dispersed nanomagnets or thin films as spin-injectors as well as for memory and sensing devices.

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Wichtige Termine:


15. Sept. 2013:
Deadline für den Sonderband Semiconductor Spintronics (DFG-Abschlussbericht) in physica status solidi b
(nähere Informationen wurden per Email zugeschickt)


30. Sept. - 2. Okt. 2013:
Abschlusstreffen des Schwerpunktprogramms "International workshop on semiconductor spintronics" in der Residenz Würzburg
(nähere Informationen)

Aktuelle Veröffentlichung(en):

C. Drexler, S.A. Tarasenko, P. Olbrich, J. Karch, M. Hirmer, F. Müller, M. Gmitra, J. Fabian, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Wang, R. Vajtai, P. M. Ajayan, J. Kono, and S.D. Ganichev :  "Magnetic quantum ratchet effect in graphene" Nature Nanotechnology 8, 104 (2013)

J.H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A.D. Wieck, and D. Hägele:  "Long electron spin coherence in ion‐implanted GaN: The role of localization" Appl. Phys. Lett. 102, 192102 (2013)

D.J. English, J. Hübner, P.S. Eldridge, D. Taylor, M. Henini, R.T. Harley, and M. Oestreich:  "Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells" Phys. Rev. B 87, 075304 (2013)

V.L. Korenev, I.A. Akimov, S.V. Zaitsev, V.F. Sapega, L. Langer, D.R. Yakovlev, Yu. A. Danilov, and M. Bayer:  "Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid" Nature Communications 3, 959 (2012)

M. Althammer, E.-M. Karrer-Müller, S.T.B. Goennenwein, M. Opel, R. Gross:  "Spin transport and spin dephasing in zinc oxide" Appl. Phys. Lett. 101, 082404 (2012)