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Schwerpunktprogramm SPP 1285
Halbleiter Spintronik
Spintronik > Projekte > Projektansicht

Projekt

Ansprechpartner1
Dr. Achim Trampert
Adresse1

Paul-Drude-Institut für Festkörperelektronik
Hausvogteiplatz 5-7
10117 Berlin

Tel.:
Tel.:030 20377 280
Fax:
Fax:030 20377 515
email:
Ansprechpartner2
Prof. Klaus Ploog
Adresse2

Paul-Drude-Institut für Festkörperelektronik
Hausvogteiplatz 5-7
10117 Berlin

Tel.:
Tel.:030 20377 352
Fax:
Fax:030 20377 201
email:
Projekttitel
Molecular-beam epitaxy of group III nitride-based dilute magnetic semiconductors
Projektbeschreibung

Dilute magnetic semiconductors are considered as potential candidates for realizing spin-injection or spin-alignment in semiconductor heterostructures. We have recently found that Gd-doped GaN shows ferromagnetism at room temperature. The atomistic mechanism for this magnetic ordering is not yet completely understood, although theoretical considerations have predicted high Curie temperatures values in dilute magnetic wide bandgap semiconductors. The project will deals with the growth of ferromagnetic Gd-doped group-III nitrides by molecular beam epitaxy (MBE) and the study of the structure-property relation. A main focus is on the realization of dilute magnetic semiconductors in comparison to granular materials that include small clusters of second-phases. Because epitaxial nitride films are highly defective, we will in detail investigate the effect of the crystalline perfection on the magnetic properties by using different substrate materials for the MBE. Furthermore, Gd-doped GaN and AlN layers reflecting high electric resistivity are used to investigate the potential of codoping with Si and Mg in order to realize n- and p-type conductivity and the effect on the magnetic behaviour.

Zurück

Wichtige Termine:


15. Sept. 2013:
Deadline für den Sonderband Semiconductor Spintronics (DFG-Abschlussbericht) in physica status solidi b
(nähere Informationen wurden per Email zugeschickt)


30. Sept. - 2. Okt. 2013:
Abschlusstreffen des Schwerpunktprogramms "International workshop on semiconductor spintronics" in der Residenz Würzburg
(nähere Informationen)

Aktuelle Veröffentlichung(en):

C. Drexler, S.A. Tarasenko, P. Olbrich, J. Karch, M. Hirmer, F. Müller, M. Gmitra, J. Fabian, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Wang, R. Vajtai, P. M. Ajayan, J. Kono, and S.D. Ganichev :  "Magnetic quantum ratchet effect in graphene" Nature Nanotechnology 8, 104 (2013)

J.H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A.D. Wieck, and D. Hägele:  "Long electron spin coherence in ion‐implanted GaN: The role of localization" Appl. Phys. Lett. 102, 192102 (2013)

D.J. English, J. Hübner, P.S. Eldridge, D. Taylor, M. Henini, R.T. Harley, and M. Oestreich:  "Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells" Phys. Rev. B 87, 075304 (2013)

V.L. Korenev, I.A. Akimov, S.V. Zaitsev, V.F. Sapega, L. Langer, D.R. Yakovlev, Yu. A. Danilov, and M. Bayer:  "Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid" Nature Communications 3, 959 (2012)

M. Althammer, E.-M. Karrer-Müller, S.T.B. Goennenwein, M. Opel, R. Gross:  "Spin transport and spin dephasing in zinc oxide" Appl. Phys. Lett. 101, 082404 (2012)