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Schwerpunktprogramm SPP 1285
Halbleiter Spintronik
Spintronik > Projekte > Projektansicht


Prof. Dr. Werner Wegscheider

Institut für Experimentelle und Angewandte Physik
Universität Regensburg
93040 Regensburg

Tel.:0941 / 943 - 2080/81
Fax:0941 / 943 - 4226
Dr. Dieter Schuh

Institut für Experimentelle und Angewandte Physik
Universität Regensburg
93040 Regensburg

Tel.:0941 / 943 - 2064
Fax:0941 / 943 - 4226
Charge carrier systems with strong spin-orbit interaction

Molecular beam epitaxy shall be applied to fabricate semiconductor heterostructures with large spin-orbit interaction. In the C modulation-doped GaAs/AlGaAs material system one focus lies on the design and exploration of tailored band-structure profiles. This should lead to adjustable Rashba induced spin-splittings of the resulting two-dimensional hole systems as a result of the structure inversion asymmetry. The other goal for this material system is to further increase the sample quality with respect to low-temperature hole mobilities and achievable densities. Among the optimisation of other growth parameters, here the implementation of reproducible substrate temperature profiles is planned. In the second part of the proposal we plan to introduce Sb as a group-V element in our molecular beam epitaxy system. This will allow the growth of InAs/GaAlSb and InSb/InAlSb heterostructures in which two-dimensional electron systems form at the corresponding interfaces. These semiconductor heterostructures are of particular importance for spintronic applications due to their peculiar properties, however, are much more demanding in the fabrication process compared to the GaAs-based heterostructures.


Wichtige Termine:

15. Sept. 2013:
Deadline für den Sonderband Semiconductor Spintronics (DFG-Abschlussbericht) in physica status solidi b
(nähere Informationen wurden per Email zugeschickt)

30. Sept. - 2. Okt. 2013:
Abschlusstreffen des Schwerpunktprogramms "International workshop on semiconductor spintronics" in der Residenz Würzburg
(nähere Informationen)

Aktuelle Veröffentlichung(en):

C. Drexler, S.A. Tarasenko, P. Olbrich, J. Karch, M. Hirmer, F. Müller, M. Gmitra, J. Fabian, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Wang, R. Vajtai, P. M. Ajayan, J. Kono, and S.D. Ganichev :  "Magnetic quantum ratchet effect in graphene" Nature Nanotechnology 8, 104 (2013)

J.H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A.D. Wieck, and D. Hägele:  "Long electron spin coherence in ion‐implanted GaN: The role of localization" Appl. Phys. Lett. 102, 192102 (2013)

D.J. English, J. Hübner, P.S. Eldridge, D. Taylor, M. Henini, R.T. Harley, and M. Oestreich:  "Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells" Phys. Rev. B 87, 075304 (2013)

V.L. Korenev, I.A. Akimov, S.V. Zaitsev, V.F. Sapega, L. Langer, D.R. Yakovlev, Yu. A. Danilov, and M. Bayer:  "Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid" Nature Communications 3, 959 (2012)

M. Althammer, E.-M. Karrer-Müller, S.T.B. Goennenwein, M. Opel, R. Gross:  "Spin transport and spin dephasing in zinc oxide" Appl. Phys. Lett. 101, 082404 (2012)